In this study, the characteristics of atomic layer deposited TiO2 films on silicon substrate were investigated. The physical and chemical properties were measured and surveyed. And an Al/ALD-TiO2/Si MOS structure was used for the electrical characterizations. For the electrical property improvements, we investigated the atomic layer deposited TiO2 films by the post-anneal treatments in nitrogen and oxygen ambient. Furthermore, the TiO2 films were passivated by fluorine ions to decrease the leakage current density that came from the liquid phase deposited SiO2 stacks.
After the post-annealing and fluorine ions passivation treatments, the dielectric constant of atomic layer deposited TiO2 film was maintained and the leakage current density was improved.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0730107-152432 |
| Date | 30 July 2007 |
| Creators | Lu, Yen-Ju |
| Contributors | none, none, none, none, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0730107-152432 |
| Rights | not_available, Copyright information available at source archive |
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