Return to search

Modeling and optimization of molecular beam epitaxy for III-V compound semiconductor growth

No description available.
Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/14836
Date12 1900
CreatorsLee, Kyeongkyun
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation
RightsAccess restricted to authorized Georgia Tech users only.

Page generated in 0.0017 seconds