Typical power outputs of commercially available diode lasers are on the
order of 5 milliwatts. This thesis discusses the growth, processing and
fabrication of high power (lOO's of milliwatts) diode lasers. Devices were
grown by Molecular Beam Epitaxy (MBE) and by Metal Organic Chemical
Vapor Deposition (MOCVD). The MOCVD diode lasers demonstrated room
temperature laser operation with peak output powers of 450 mW/facet pulsed
mode. The MBE diode lasers demonstrated room temperature pulsed laser
operation of 110 mW/facet.
The dynamics of the quantum well structure were studied. The carrier
concentration, threshold current density and coatings were modeled. It was
demonstrated through transmission line analogies that, depending on the thickness
of the high reflective coating, the result would be a high output power diode laser
or a superluminescent device. The MBE device was coated with a high power
coating resulting in a peak power of 450 mW. The MOCVD device was used to
study the superluminescence resulting from specific coatings. / Graduation date: 1992
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/36675 |
| Date | 30 March 1992 |
| Creators | Parson, Kevin J. |
| Contributors | Plant, Thomas K. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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