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Strain effect of silicon doped indium nitride films grown by plasma-assisted molecular beam epitaxy

The effect of silicon doping on the strain in c-plane InN films grown on c-plane GaN by plasma-assisted molecular beam epitaxy is investigated. Strain is measured by x-ray reciprocal space mapping and Raman spectroscopy. The silicon doping concentration of our sample is about 1018 cm-3 by Hall measurement. Relation between the strain and the silicon concentration is obtained. To understand the increase in tensile stress caused by Si doping is discussed in terms of a crystallite coalescence model.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0810110-170812
Date10 August 2010
CreatorsYen, Wei-chun
ContributorsLi-Wei Tu, Min-Hsiung Tsai, Yung-Sung Chen, Der-Jun Jang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810110-170812
Rightsnot_available, Copyright information available at source archive

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