<p> An approximate model has been developed for the p-n-p
lateral segmented transistor, and used to characterize the behaviour
of the common-emitter dc current gain to the collector segment when the
control segment is set to arbitrary voltage levels. The model is a
development of the type introduced by Ebers and Moll. </p> <p> The dc current gain is found to be a sensitive function of the
control segment voltage, and for changes in this voltage level of the
order of± 200mV, it can be made to vary between two limiting values
which are dependent on device geometry. A number of applications for
this device have been suggested, particularly where an a.g.c. function
or controlled current source requirement are needed. </p> <p> An analytic expression has been obtained for the controlled hFE
in terms of the control segment voltage and the device parameters,
using an approximate analogue for the device geometry. The results
have been found to describe the behaviour for a family of p-n-p lateral
transistors, having circular geometry with different segment periphery
ratios, within the limits of the approximations and experimental errors. </p> / Thesis / Master of Engineering (MEngr)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/19722 |
| Date | 06 1900 |
| Creators | Mills, Michael |
| Contributors | Barber, H.D., Engineering Physics |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
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