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Tailored carbon based nanostructures as components of flexible thermoelectric and other devices

Carbon based nanostructures, such as fullerenes, carbon nanotubes and graphene showed a high potential for a vast of electronic and energy applications. However, properties of such materials in pristine forms can be insufficient to satisfy diverse specific demands, and tailoring their intrinsic properties is of increasing importance. In this work, different types of single-walled carbon nanotubes (SWCNTs) with controlled semiconducting fractions are p-/n-type doped by chemical doping in an attempt to tailor physical properties of the SWCNTs for the use in flexible thermoelectric (TE) devices and thermoplastic polymer-based conducting composites. Several p-/n-type doping schemes and an electronic type separation strategy have been developed to fulfill the task. A complete solution for efficient and scalable production of doped SWCNTs for the fabrication of flexible thermoelectric components is developed in this work.
For p-type doping, a combined experimental and theoretical work demonstrates that boron atomic doping is an efficient way to simultaneously improve Seebeck coefficient (S) and electrical conductivity (σ) of SWCNT films, showing an increased thermoelectric power factor (S2σ) up to 255 μW/mK2 by a factor of 2.5 comparing to the pristine SWCNTs. For n-type doping, treatment of SWCNTs with potassium oxide and crown ether solution lead to a negative Seebeck coefficient of -30 μV/K and a promising S2σ up to 50 μW/mK2.
A gel chromatography method has been developed to separate large-diameter (1.2-1.8nm) SWCNTs by electronic properties and to increase the purity of the sorted semiconducting carbon nanotubes (sc-SWCNTs) up to 95%.
Effects of p-/n-type doping induced by different plasma treatments on the thermoelectric properties have been investigated for thin films made of sorted sc-SWCNTs. The high-purity sc-SWCNTs show significantly improved S of 125 μV/K. As the effects of p-type doping, air plasma treatments with proper duration (40s) lead to the increase of S, σ and thus S2σ up to 190 μW/mK2. The n-type doping for the SWCNT films have been performed via ammonia plasma treatment, and a negative S value of -80 μV/K has been achieved in air at 110oC, which is one of the best values ever reported for n-type carbon nanotube films.
A flexible thermoelectric module was fabricated by printing ink made of the prepared boron doped SWCNTs and an organic solvent as an example for producing efficient all-carbon thermoelectric generators. At a temperature difference ΔT=60 K, the output voltage reaches 20 mV and the power output of 400 nW is obtained, although no “n”-legs are used in this module.
At last, a work has been done on the development of melt mixed composites as TE materials, in which polypropylene is used as the matrix and boron-doped SWCNTs are used as conducting fillers. A percolation threshold lower than 0.25wt. % and a maximum conductivity up to 125 S/m at 5wt. % of SWCNT load have been achieved. The maximum conductivity is more than two times higher than that of the composites made with pristine SWCNTs as fillers.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:33190
Date15 February 2019
CreatorsLiu, Ye
ContributorsWiesmann, Hans-Peter, Cuniberti, Ginaurelio, Wallmersperge, Thomas, Technische Universität Dresden
PublisherSLUB Dresden
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess

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