In this thesis, the leakage-mechanism after O2-plasma treatments was investigated. And the mechanism is transformed from Schottky emission into ionic conduction due to moisture uptake after porous silica film undergoes O2 plasma ashing. Besides, CMP process can to recover the damaged films by removed the degraded parts. From the result, we know that O2 plasma causing the bulky damage. Finally, the resistance of metal penetration of O2 plasma treated POSG is performed by utilizing BTS test. It was found that the moisture uptake in POSG films assisting metals in ionization process. Then, the penetrated metal ions in POSG film causes the leaky characters degraded.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0708102-111915 |
| Date | 08 July 2002 |
| Creators | Tsai, Hong-Ming |
| Contributors | Ting-Chang Chang, Chao-Hsin Chien, Chin-Fu Liu, Po-Tsun Liu, Dong-Po Wang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915 |
| Rights | unrestricted, Copyright information available at source archive |
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