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Ultrafast Photocarrier Relaxation Mechanisms in Sputter-Deposited CdTe Quantum Dot Thin Films

Photocarrier relaxation mechanisms in CdTe quantum dots in the strong confinement regime were investigated using femtosecond pump-probe measurements. The quantum dots were formed in films deposited on silica substrates using a sequential RF magnetron sputtering process with heat treatment to grow crystallites of various sizes. Size selection was achieved by tuning the laser to various wavelengths across the first excitation transition. The recombination mechanism showed a biexponential decay, which was fitted to a three-level model. It was shown that recombination occurs increasingly through the intermediate energy level as the size of the dots decreases. The nature of the intermediate level and the role of Auger recombination is discussed.

Identiferoai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/193596
Date January 2007
CreatorsJuncker, Christophe Rene Henri
ContributorsSimmons, Joseph H., Simmons, Joseph H., Simmons, Joseph H., Potter, Barrett G., Lucas, Pierre, Peyghambarian, Nasser, Armstrong, Neal R.
PublisherThe University of Arizona.
Source SetsUniversity of Arizona
LanguageEnglish
Detected LanguageEnglish
Typetext, Electronic Dissertation
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.

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