Nearly dislocation-free vertical GaN pillars in nanoscale were grown on Si (111) surface through self-assembly by molecular-beam epitaxy. No extra catalytic or nanostructural assistance has been employed. These nanorods have a lateral dimension from 10 nm to ~ 800 nm and a height of 50 nm to 3
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-1013104-163813 |
| Date | 13 October 2004 |
| Creators | Hsiao, Ching-Lien |
| Contributors | none, none, none, none, none, none, Li-wei Tu, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1013104-163813 |
| Rights | not_available, Copyright information available at source archive |
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