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Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition

Thesis (Ph. D.)--Ohio University, March, 2000. / Title from PDF t.p.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/225900570
Date January 2000
CreatorsGao, Yungeng.
PublisherOhio : Ohio University,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceConnect to resource online

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