The growth of single and multilayer BN films on several substrates was investigated. A typical atomic layer deposition (ALD) process was demonstrated on Si(111) substrate with a growth rate of 1.1 Å/cycle which showed good agreement with the literature value and a near stoichiometric B/N ratio. Boron nitride films were also deposited by ALD on Cu poly crystal and Cu(111) single crystal substrates for the first time, and a growth rate of ~1ML/ALD cycle was obtained with a B/N ratio of ~2. The realization of a h-BN/Cu heterojunction was the first step towards a graphene/h-BN/Cu structure which has potential application in gateable interconnects.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc84305 |
| Date | 08 1900 |
| Creators | Zhou, Mi |
| Contributors | Kelber, Jeffery A., Cooke, Stephen A. |
| Publisher | University of North Texas |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | Text |
| Rights | Public, Zhou, Mi, Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved. |
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