Return to search

Effects of plasma species during the molecular-beam epitaxy growth of dilute nitride semiconductors for infrared optoelectronic device applications

Not available / text

Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/2844
Date28 August 2008
CreatorsOye, Michael Mikio
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.

Page generated in 0.0021 seconds