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Study on the Fabrication of Non-volatile memory with Metal Nanocrystals

In recent years, the fundamental researches on nanocrystals have been received increasing attentions for the novel applications, especially the nonvolatile memory technology. Adoption of nanocrystals technology could solve the serious limitation suffered by the conventional nonvolatile memory, flash, while scaling down. Once the thin tunneling oxide of flash device has been created a leaky path, all the stored charge in the floating gate will be lost after numerous counts of data reading and writing. Hence, the thinning of tunneling oxide will become one of important keys to the scaling limitation. Furthermore, if the tunneling oxide can not be thinned any more, both the operation voltage and speed of memory can not be improved. These drawbacks will restrict the development of nonvolatile memory.
Replacement of floating gate structure with nanocrystals could effectively avoid the data losing due to the leaky path in the thin tunneling oxide. All stored charges can¡¦t be lost through the few leaky paths since the charges are stored in distributed nanocrystals. The charges stored nearby the leaky path will be lost, but others are still kept in the distributed and independent nanocrystals.
The advantages of metal nanocrystals has have higher density of states around Fermi level, stronger coupling with conduction channel, wide range of available work functions and smaller energy perturbation due to carrier confinement. So metal nanocrystals can reduce operate voltage, and increase write/erase speed and endurance.
In this thesis, we will study of cobalt and cobalt-silicide as the memory storage element. The nanocrystals were formed by high temperature oxidation or metal rapid thermal annealing with all kinds of conditions. And we analyze the effect of electron storage at metal nanocrystals by means of material and electrical analysis.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0907105-015542
Date07 September 2005
CreatorsChen, Yan-yu
ContributorsPo-Tsun Liu, Ting-Chang Chang, An-Kuo Chu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907105-015542
Rightscampus_withheld, Copyright information available at source archive

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