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Electronic and material properties of MOS-gated Si/Si←1←-←xGe←x P-channel heterostructures

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Identiferoai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:263117
Date January 1997
CreatorsLander, Robert James Pascoe
PublisherUniversity of Warwick
Source SetsEthos UK
Detected LanguageEnglish
TypeElectronic Thesis or Dissertation

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