Ridge-type 1.3£gm InGaAsP diode lasers with a planar waveguide
structure have been successfully demonstrated. After ridge etching, a
SiO2 thin film was sputtered onto the sample as the surface passivation
layer, following by the coating of Benzocyclobutene (BCB) polymer
surface planarization. Before metalization, the thin polymer
and SiO2 layers above the ridge were removed by dry etching and wet
etching techniques. The fabrication was completed by evaporating
contact metals to the samples.
The cavity length of the measured laser diode is 1mm, and the
threshold current of the planar laser and the ridge laser are both
32mA. The total resistance and threshold voltage of the planar device
are 6.5£[ and 1.3 V. The differential quantum efficiency as large as
85% is obtained. In addition, a conventional ridge-type laser is
fabricated for comparison. The total resistance and threshold voltage
of conventional ridge-type device are 14£[ and 2.1V. The differential
quantum efficiency is 78%.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0610102-110723 |
| Date | 10 June 2002 |
| Creators | Gong, Jian-Fu |
| Contributors | none, none, none, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0610102-110723 |
| Rights | unrestricted, Copyright information available at source archive |
Page generated in 0.0213 seconds