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Spectroscopic ellipsometer for non-destructive characterization of semiconductors.

by Kwong-hon Lee. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1993. / Includes bibliographical references (leaves [112-115]). / Chapter CHAPTER 1. --- INTRODUCTION / Chapter CHAPTER 2. --- PRINCIPLE OF ELLIPSOMETER / Chapter CHAPTER 3. --- MATHEMATICAL REPRESENTATION OF ELLIPSOMETRY / Chapter Section 3.1 --- Ambient Substrate / Chapter Section 3.2 --- Single Layer (Ambient-film substrate) / Chapter Section 3.3 --- Multilayer system (Isotropic Stratified planar structure) / Chapter CHAPTER 4. --- CLASSIFICATION OF ELLIPSOMETER / Chapter Section 4.1 --- Null-type Ellipsometer / Chapter Section 4.2 --- Photometric Ellipsometer / Chapter Section 4.3 --- Spectroscopic Ellipsometer / Chapter CHAPTER 5. --- CONSTRUCTION AND CALIBRATION OF THE SPECTROSCOPIC ELLIPSOMETER / Chapter Section 5.1 --- Design and construction / Chapter 5.1.1 --- Optical Assembly / Chapter 5.1.2 --- Electronic Circuit / Chapter 5.1.3 --- Micro-computer (Software) / Chapter 5.1.4 --- Modification of configuration / Chapter Section 5.2 --- Alignment and Calibration / Chapter 5.2.1 --- Alignment of Optical units / Chapter 5.2.2 --- Calibration of the system / Chapter 5.2.3 --- Measurements on standard samples / Chapter CHAPTER 6. --- ANALYSIS OF ELLIPSOMETRIC PARAMETERS / Chapter Section 6.1 --- Ambient-substrate model / Chapter Section 6.2 --- Ambient-layers model / Chapter 6.2.1 --- Parameter generator / Chapter 6.2.2 --- Least square fitting / Chapter 6.2.3 --- Choice of error function / Chapter CHAPTER 7. --- EXPERIMENTAL RESULT / Chapter Section 7.1 --- Spectra of Refractive index / Chapter 7.1.1 --- Low temperature MBE growth GaAs / Chapter 7.1.2 --- Amorphous Carbon / Chapter 7.1.3 --- High order x AlxGa1-xAs with different cooling rate / Chapter Section 7.2 --- Comparison of ellipsometric spectrum of SOI samples / Chapter 7.2.1 --- Difficulty in the analysis of multi-layer structure / Chapter 7.2.2 --- Silicon on insulator (SOI) / Chapter 7.2.2.1 --- The beam current effects / Chapter 7.2.2.2 --- Annealing after implantation / Chapter CHAPTER 8. --- CONCLUSION / Chapter Section8.1 --- Summary of the results / Chapter Section8.2 --- Suggestions for future work / REFERENCE / APPENDIX(A)MARQUART ALGORITHM / Chapter (B) --- CIRCUIT DIAGRAM

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_319136
Date January 1993
ContributorsLee, Kwong-hon., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, [124] leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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