Recent advances in wireless communication industry, radio- frequency circuits are developing fast. For power amplifiers, the active circuits are mainly composed of transistors where withstand high voltage and current. The excellent transistors characteristic result in good circuit performances.
In the thesis, the modeling of InGaAs pseudomorphic high electron mobility transistor was provided by Win Semiconductor Corporation. The established small signal model contains extrinsic and intrinsic elements. The extrinsic elements are extracted by simple method without fitting process for long time. Then, the intrinsic elements are obtained by conventional matrix transformations. The each element of models is varied with different gate width area are also discussed.
Finally, the nonlinear models are expanded upon the concept of small signal model. Due to some of intrinsic elements are significantly varied with bias, small signal models have not applied to nonlinear circuit simulations. For developing nonlinear models, the nonlinear elements characteristics are described by empirical fitting equations. The accuracy of models is achieved by comparing simulated and on wafer measurement results, including DC¡Bsmall signal and large signal power characteristics.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0902109-111931 |
| Date | 02 September 2009 |
| Creators | Cheng, Chih-Han |
| Contributors | Chih-Wen Kuo, Ken-Huang Lin, Wen-Liang Li, Tzyy-Sheng Horng, Chie-In Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902109-111931 |
| Rights | not_available, Copyright information available at source archive |
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