The main focus of this paper is the evolution of complex behavior in a system of coupled nonlinear memristor circuits depending on the applied coupling conditions. Thereby, the parameter space for the local activity and the edge-of-chaos domain will be determined to enable the emergence of the pattern formation in locally coupled cells according to Chua's principle. Each cell includes a Niobium oxide-based memristor, which may feature a locally active behavior once it is suitably biased on the negative differential resistance region of its DC current-voltage characteristic. It will be shown that there exists a domain of parameters under which each uncoupled cell may become locally active around a stable bias state. More specifically, under these conditions, the coupled cells are on the edge-of-chaos, and can support the static and dynamic pattern formation. The emergence of such complex spatio-temporal behavior in homogeneous structures is a prerequisite for information processing. The theoretical results are confirmed by
Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76776 |
Date | 26 November 2021 |
Creators | Weiher, Martin, Herzig, Melanie, Tetzlaff, Ronald, Ascoli, Alon, Mikolajick, Thomas, Slesazeck, Stefan |
Publisher | IEEE |
Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
Language | English |
Detected Language | English |
Type | info:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
Rights | info:eu-repo/semantics/openAccess |
Relation | 1558-0806, 10.1109/TCSI.2019.2894218 |
Page generated in 0.0018 seconds