In recently years, nonvolatile memory with nanocrystals cell have widely applied to overcome the issue of operation and reliability for conventional floating gate memory. The excellent electrical characteristics of memory device need good endurance, long retention time and small operation voltage. Among numerous memory devices with nanocrystals, the memory device with metal nanocrystals was widely researched. It will be new candidate for flash memory. The advantages of metal nanocrystals has have higher density of states around Fermi level, stronger coupling with conduction channel, wide range of available work functions and smaller energy perturbation due to carrier confinement. So metal nanocrystals can reduce operate voltage, and increase write/erase speed and endurance. Most important of all, we can control the sizes of nanocrystals dot and manufacture at low temperature¡CThis advantage can apply to thin film transistor liquid crystal display; it fabricates driving IC and logical IC on panel for diverseness and adds memory beside switch TFT as image storage to reduce power consumption for portability.
In this thesis, we will discuss metal nanocrystals as memory storage medium. And we can use high temperature oxidation, low temperature annealing with oxygen to form nanocrystals. Besides we analyze the effect of electron storage at metal nanocrystals by means of material and electrical analysis.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0629104-145846 |
| Date | 29 June 2004 |
| Creators | Wu, Hsing-Hua |
| Contributors | Tai-Fa Young, Ying-Lang Wang, Ting-Chang Chang, Po-Tsun Liu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-145846 |
| Rights | unrestricted, Copyright information available at source archive |
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