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Atomistics of dislocation mobility in silicon : core structure and mechanisms

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Nuclear Engineering, 1997. / Includes bibliographical references (p. 132-139). / by João F. Justo Filho. / Ph.D.

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/46072
Date January 1997
CreatorsJusto Filho, João F
ContributorsSidney Yip, Vasily V. Bulatov., Massachusetts Institute of Technology. Department of Nuclear Engineering, Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
PublisherMassachusetts Institute of Technology
Source SetsM.I.T. Theses and Dissertation
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Format139 p., application/pdf
RightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission., http://dspace.mit.edu/handle/1721.1/7582

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