Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates using the reactive RF magnetron sputtering in this thesis. By means of the analysis of XRD, SEM, TEM and AFM, the optimal deposition conditions of highly C-axis oriented AlN films were obtained with RF power of 190W, sputtering pressure of 3mTorr, nitrogen concentration (N2/N2+Ar) of 30%, and substrate temperature of 400¢J. The characteristics of films annealed at temperature range from 600¢J to 1150¢J with N2 flow for 2 hours has been studied. Experimental results reveal that the films retain the high quality up to 800¢J. But when the temperature above 1000¢J, AlN films will be oxided to AlO:N.
In addition, the interdigital transducers (IDTs) were fabricated on the films annealed at 800¢J for 2 hours to study the characteristics of SAW devices. The results show that the central frequency, insertion loss and phase velocity of SAW were 182.25 MHz, -12.95 dB and 5824 m/sec, respectively. At the same time, we try to match the impedence of devices and improve the frequency response by using a simulation program. After the impedence was matched, the insertion are not strongly improved but the frequency response and closed-in sidelobe rejection exhibit better.
The effects of temperature on the SAW devices show that the central frequency almost does not shift when the temperature increases. But the insertion loss slightly increases with the temperature increased, the variation is about -0.02 dB/¢J.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0622100-140053 |
| Date | 22 June 2000 |
| Creators | Tsai, Chia-Lung |
| Contributors | Ying-Chung Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0622100-140053 |
| Rights | unrestricted, Copyright information available at source archive |
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