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Investigation of the Linear and Nonlinear Optical Properties of InSb

Highly sensitive magneto-optical techniques have been used to investigate weak linear and nonlinear optical absorption mechanisms in p- and n-type InSb. As a result, new absorption processes involving both impurities and free carriers have been identified and studied in detail. For p-InSb, magneto-optical spectra has been obtained over a wide range of temperatures and photon energies. The spectra obtained at higher sample temperatures are seen to result from combined-resonance transitions of free holes between heavy-and light-hole Landau levels, while bound-hole transitions between ground heavy-hole-like and excited light-hole-like acceptor states are observed at lower temperatures. Analysis of the combined-resonance data along with extensive intra-conduction band and two-photon interband data using a modified Pidgeon and Brown 8X8 energy band model has allowed the determination of a single set of band parameters for InSb that quantitatively describes these different sets of data. In addition, a ground state binding energy of 8.1 meV for Cd acceptors and 42.5 meV for Au acceptors has been extracted from the analysis of the bound-hole spectra. For n-lnSb, photo-Hall techniques have been developed and used to study both resonant impurity and two-photon magneto-absorption (TPMA) processes in detail. As a result, LO-phonon-assisted impurity cyclotron resonance harmonic (LOICRH) transitions from the shallow Te donor level have been observed for the first time. In addition, transitions from deep levels are also observed in the photo-Hall signal obtained at sample temperatures greater than 20K. Both time-resolved and intensity-dependent measurements on impurity and TPMA processes are reported and the results compared directly with the predictions of rate equations describing the photoexcited carrier dynamics. These investigations have yielded important information about the optical properties of n-InSb; e.g. impurity and two-photon absorption coefficients, photo-excited carrier lifetimes, and recombination rates.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc332178
Date12 1900
CreatorsLittler, C. L.
ContributorsSeiler, David G., Smirl, Arthur L., Soileau, M. J., Mackey, H. J., Van Stryland, Eric W.
PublisherNorth Texas State University
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
Formatviii, 279 leaves : ill., Text
RightsPublic, Littler, C. L., Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved.

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