Measurement of absorption spectra of plasma during reactive ion etching enables characterization of etched species and control over the etching process. Aim of this diploma thesis is to design spectroscope with Czerny-Turner configuration for reactive ion etching system. Developed spectroscope achieves 1 nm resolution in 350-800 nm range. Device was tested during reactive ion etching of silicon.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:400965 |
| Date | January 2019 |
| Creators | Šilhan, Lukáš |
| Contributors | Dostál, Zbyněk, Šerý, Mojmír |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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