In this paper, we analytically describe the parametric amplification in ring resonators using silicon and silicon nitride waveguides. Achievable gain and bandwidth of the ring-based amplifiers are studied taking into account the Kerr nonlinearity for silicon nitride and Kerr nonlinearity as well as two photon absorption and free carrier absorption for silicon waveguides. Both telecom and 2-μm wavelengths are investigated in case of silicon. An approach for obtaining the optimum amplifier design without initiating the comb generation has been introduced. It is shown that there is a trade-off between the input pump and amplifier bandwidth. It is estimated that using optimum designs an amplifier with a gain and bandwidth of 10 dB and 10 GHz could be feasible with silicon ring resonators in 2 μm.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:35122 |
| Date | 05 September 2019 |
| Creators | Jazayerifar, Mahmoud, Namdari, Meysam, Hamerly, Ryan, Gray, Dodd, Rogers, Christopher, Jamshidi, Kambiz |
| Publisher | SPIE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 10.1117/12.2252635, info:eu-repo/grantAgreement/German Research Foundation/Highly adaptive energy-efficient computing/164481002/ |
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