Return to search

An evaluation of the electrical, material, and reliability characteristics and process viability of ZrO₂ and ZrOxNy for future generation MOS gate dielectric

Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/56826922
Date January 2002
CreatorsNieh, Renee Elizabeth.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

Page generated in 0.0015 seconds