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A study of electron transport in the inversion layer advanced silicon carbide (SiC) power MOSFETs /

Thesis (Ph. D.)--Lehigh University, 2004. / Includes vita. Includes bibliographical references (leaves 85-89).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/59226440
Date January 2004
CreatorsZeng, Yu (Anne),
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
TypeAcademic dissertations

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