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Process development, characterization, transient relaxation, and reliability study of HfO₂ and HfSi(x)O(y) gate oxide for 45nm technology and beyond

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/61185660
Date January 2005
CreatorsAkbar, Mohammad Shahariar. Lee, Jack Chung-Yeung,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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