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Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETs

Thesis (Ph.D.)--Stanford University, 2006. / Adviser: Krishna C. Saraswat. Includes bibliographical references (p. 160-177)

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/123460299
Date January 2006
CreatorsKrishnamohan, Tejas.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
Sourceaccess full-text online access from Digital Dissertation Consortium

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