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Modeling of narrow-width effect in MOSFET

published_or_final_version / Electrical Engineering / Doctoral / Doctor of Philosophy

  1. 10.5353/th_b3123049
  2. b3123049
Identiferoai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/35182
Date January 1984
Creators黎沛濤, Lai, Pui-to.
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Source SetsHong Kong University Theses
LanguageEnglish
Detected LanguageEnglish
TypePG_Thesis
Sourcehttp://hub.hku.hk/bib/B31230490
RightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License
RelationHKU Theses Online (HKUTO)

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