Abstract
In this work, H2, CH4, and O2 are used as gas sources and
C3H903B is used as the doping source, microwave plasma
chemical vapor deposition and a two-steps deposition process
will be applied to the growth of boron-doped diamond on
p-type(111) silicon substrate.
In this work, nucleation and growth of diamond film have been
studied. A series of experiments are focused on the depenence of
experimental pressure, temperature, power, dc bias, flow rates of
O2, and doping concentration of C3H903B. The samples are
examined by SEM, Raman, XRD, FTIR, and I-V. The results
show that if nucleation is assisted by a negative dc bias, it can
reach high density. The growth of diamond and the boron-doped
diamond film is in multi steps. After 90 minutes of growth, the
mechanism of deposition will be changed.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0721103-103256 |
| Date | 21 July 2003 |
| Creators | Chen, Wei-Szu |
| Contributors | Tai-Fa Young, Der-jin Jang, Ying-Chung Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721103-103256 |
| Rights | unrestricted, Copyright information available at source archive |
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