Polycrystalline p-Cu2O were fabricated by reactive rf magnetron sputtering . we found that The electrical, optical, and crystallographical properties of films were strongly dependent on the deposition condition . Grant size increasing in the range from 10 to 45nm , A hole concentration increasing in the range from 1016 to 1017 cm-3 and a mobility increasing on the order of 10-1 cm2/V s were obtained in the cuprous oxide thin film prepared by controlling work pressure (Argon partial partial pressure ) .
Fabricated thin-film heterojunction diodes consisting of a p-type cuprous oxide combined with and n-type Al-doped ZnO and ITO exhibited a rectifying current-voltage characteristic .
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0706105-123325 |
| Date | 06 July 2005 |
| Creators | Yang, Shun-jie |
| Contributors | Ming-Chi Jhou, Mau-Phon Houng, ¢Òe-Sin Gan, Bae-Heng Tseng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706105-123325 |
| Rights | campus_withheld, Copyright information available at source archive |
Page generated in 0.0018 seconds