Group III nitrides have recently attracted great interest and are intensively studied for that cover continuously from the ultraviolet to nearinfrared region by proper alloying.Therefore, group III nitrides have wide applications inoptoelectronic devices, such as light-emitting diodes,ultraviolet or blue lasers, and full color displays.
Unintentionally doped m-GaN thin films have been epitaxially grown on LAO by PAMBE. The optical characteristics were investigated with photoluminescence (PL), photoluminescence excitation (PLE), and absorption spectrum.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0822107-134225 |
| Date | 22 August 2007 |
| Creators | Cheng, Yu-li |
| Contributors | Quark Yung-Sung Chen, Dong-Po Wang, Li-Wei Tu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0822107-134225 |
| Rights | not_available, Copyright information available at source archive |
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