Work is focused on computer modeling of PN junction and MOSFET transistor in the program COMSOL Multiphysics and in program TiberCAD. The text is discussed on the drift and diffusion in semiconductors. Also shown is a method of modeling the PN junction and MOSFET transistor in the programs and compare models.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:219148 |
| Date | January 2011 |
| Creators | Major, Jan |
| Contributors | Harwot, Ondřej, Pokorný, Michal |
| Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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