Abstract
The tendency to manufacture of semiconductor is to minimize the size of device. With the size was minimized, the number of transistor on the chip was maximized at the same time .However, when the drift region of Power-MOSFET is shorter will result in the Breakdown Voltage is lower, so this do not conform our purpose for application, and therefore we should look for some alternative method to enhance efficiency.
One of these method of efficiency promotion is adopting channel strain. We adopt bending silicon substrate to obtain strain. By using this method, we successfully enhance drain current and mobility 12.1% and 4.1% individually.
Furthermore, regarding the reliability study, we realize the hot-carrier effect influence under strain silicon. The longer the size(Lg & DL) of Power- MOSFET , the reliability is better. When device were bent under Bending R=40mm and Lg=0.8(m conditions, we can obtain the better reliability of device than flat chip.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0831109-204106 |
| Date | 31 August 2009 |
| Creators | Chen, Jung-hsiang |
| Contributors | Wen-Yao Huang, Ting-Chang Chang, Ann-Kuo Chu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106 |
| Rights | off_campus_withheld, Copyright information available at source archive |
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