We use molecular beam deposition (MBD) system to grows bi-layers
CuInSe2-based thin film solar cell, soda-lime glass as our substrate,
cadmium sulfide(CdS) as our buffer layer, zinc oxide(ZnO) as window
layer, Mo as back contact metal and using Al as front contact metal. In
our device fabrication process, we primary use physical vapor
deposition(PVD) to grows thin film in vacuum condition expect
Cadmium sulfide.
We already fabricate the CdS/CuInSe2-based thin film solar cell
successful. Using current-voltage measurement to get fill factor(F.F.) is
39.76%, open circuit voltage(Voc) is 0.26V and short circuit current(Isc) is
2.104mA in our device. It¡¦s so essential to improve every layers
properties in order to get higher quantum efficiencies. Especially,
resistivity of the zinc oxide window layer is too high and the interface
properties between Al and ZnO is not so good. The junction perfection
factor is 1.9161, recombination current is the dominate current. So,
research and further improve interface characterization between
CuInSe2/CdS is necessary.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0629103-185513 |
| Date | 29 June 2003 |
| Creators | Tu, Jen-Chieh |
| Contributors | Bae-heng Tseng, Shih-jung Bai, Mau-phon Houng, Huey-liang Hwang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629103-185513 |
| Rights | unrestricted, Copyright information available at source archive |
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