<p>During operation of heavy ion accelerators a significant pressure rise has been observed when the intensity of the high energy beam was increased. The cause for this pressure rise is ion induced desorption, which is the result when beam ions collide with residual gas molecules in the accelerator, whereby they undergo charge exchange. Since the change in charge state will affect the bending radius of the particles after they have passed a bending magnet, they will not follow the required trajectory but instead collide with the vacuum chamber wall and gas are released. For the Future GSI project FAIR (Facility for Antiproton and Ion Research) there is a need to upgrade the SIS18 synchrotron in order to meet the requirements of the increased intensity. The aim of this work was to measure the desorption yields, η, (released molecules per incident ion) from materials commonly used in accelerators: 316LN stainless steel, Cu, Etched Cu, gold coated Cu, Ta and TiZrV coated stainless steel with argon and uranium beams at the energies 5-100 MeV/u. The measurements were performed at GSI and at The Svedberg Laboratory where a new dedicated teststand was built. It was found that the desorption yield scales with the electronic energy loss to the second power, decreasing for increasing impact energy above the Bragg Maximum. A feasibility study on the possibility to use laser refractometry to improve the accuracy of a specific throughput system was performed. The result was an improvement by up to 3 orders of magnitude, depending on pressure range.</p>
Identifer | oai:union.ndltd.org:UPSALLA/oai:DiVA.org:uu-8654 |
Date | January 2008 |
Creators | Hedlund, Emma |
Publisher | Uppsala University, Division of Nuclear and Particle Physics, Uppsala : Acta Universitatis Upsaliensis |
Source Sets | DiVA Archive at Upsalla University |
Language | English |
Detected Language | English |
Type | Doctoral thesis, comprehensive summary, text |
Relation | Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, 1651-6214 ; 425 |
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