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Měření doby života nosičů proudu ve strukturách křemíkových solárních článků / Lifetime measurement of current carriers in silicon solar cells structures

This thesis deals with a lifetime measurement of current carriers in silicon solar cell structures. In the first chapter there is a description of several recombination models and their participation at a final effective lifetime value. By using these recombination models in a computer simulation it is possible to receive approximate evaluation of some important silicon solar cell structure parameters. The PC1D simulation program was used for this thesis. For the lifetime measurement of real test-wafers two methods were used: QSSPC (quasi-steady-state photoconductance) and MW-PCD (microwave photoconductance decay). There is a detail description of these methods, used measurements machines and differences between both of them in the chapter four. The main objective of the thesis is mentioned in the last chapter, which is mainly focused on a chemical passivation of silicon wafers and deals with a problem of post-passivation wafer cleaning. There are three passivation techniques mentioned: the iodine in ethanol solution, the iodine and polymer in ethanol solution and the quinhydron in methanol solution. In two cases a results, that are adequate to return the tested wafers in the manufacture process, were achieved.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:217834
Date January 2009
CreatorsMacháček, Martin
ContributorsHégr, Ondřej, Boušek, Jaroslav
PublisherVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/masterThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

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