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Phase-Field Modeling of Electromigration-Mediated Morphological Evolution of Voids in Interconnects

abstract: Miniaturization of microdevices comes at the cost of increased circuit complexity and operating current densities. At high current densities, the resulting electron wind imparts a large momentum to metal ions triggering electromigration which leads to degradation of interconnects and solder, ultimately resulting in circuit failure. Although electromigration-induced defects in electronic materials can manifest in several forms, the formation of voids is a common occurrence. This research aims at understanding the morphological evolution of voids under electromigration by formulating a diffuse interface approach that accounts for anisotropic mobility in the metallic interconnect. Based on an extensive parametric study, this study reports the conditions under which pancaking of voids or the novel void ‘swimming’ regimes are observed. Finally, inferences are drawn to formulate strategies using which the reliability of interconnects can be improved. / Dissertation/Thesis / Masters Thesis Materials Science and Engineering 2020

Identiferoai:union.ndltd.org:asu.edu/item:57105
Date January 2020
ContributorsVemulapalli, Sree Shivani (Author), Ankit, Kumar (Advisor), Chawla, Nikhilesh (Committee member), Singh, Arunima (Committee member), Arizona State University (Publisher)
Source SetsArizona State University
LanguageEnglish
Detected LanguageEnglish
TypeMasters Thesis
Format51 pages
Rightshttp://rightsstatements.org/vocab/InC/1.0/

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