ZnO is a wide band gap semiconductor material, which has a band gap of 3.37 eV at room temperature, its most important characteristic is the high exciton bounding energy of 60 meV. Based on these characteristics, ZnO has potential applications in short wavelength photoelectric devices. The dissertation develops the following creative research on the problems of the growth controlled ZnO nanostructures, design and preparation of nanodevices. Exploring chemical vapor deposition method, through controlling the oxygen flux, the conversion from 1D to 2D growth was realized, thus ZnO nanobolt arrays were obtained; exploring hydrothermal method, through adjusting the size of the seed particle and solution concentration, ZnO nanowires with different size were obtained. The stimulated emission were observed with threshold of 96 KW/cm2 excited by femtosecond laser in the optically pumped aligned ZnO nanowires; in order to lower the threshold of the stimulated emission, Pt layer as a high reflectivity mirror was fabricated on Si substrate, optical loss has been effectively decreased, thus the threshold of the stimulated emission was further lowered to 17.3 KW/cm2 for the optically pumped ZnO nanowires. The ZnO microcrystalline film obtained by hydrothermal method with multiple growth present periodically arranged structure with parallel sides. The electrically pumped single mode lasing emission located at 407 nm with FWHM of 0.7 nm was obtained based on ZnO microcrystalline film /p-GaN heterojunction. Closely packed ZnO nanowire array was fabricated on Si substrate by magnetron sputtering method, the visible and UV dual bands alternative photo-detection was realized through adjusting forward and reverse bias.
| Identifer | oai:union.ndltd.org:CCSD/oai:tel.archives-ouvertes.fr:tel-00647319 |
| Date | 25 May 2011 |
| Creators | Guo, Zhen |
| Publisher | Université d'Orléans |
| Source Sets | CCSD theses-EN-ligne, France |
| Language | English |
| Detected Language | English |
| Type | PhD thesis |
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