by Fong Hon Hang = 超薄二氧化硅的固定電荷分佈和電擊穿特性 / 方漢鏗. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Fong Hon Hang = Chao bo er yang hua gui de gu ding dian he fen bu he dian ji chuan te xing / Fang Hankeng. / ABSTRACT --- p.i / ACKNOWLEDGEMENTS --- p.iii / TABLE OF CONTENT --- p.iv / LIST OF FIGURES --- p.ix / LIST OF TABLES --- p.xiv / LIST OF SYMBOLS --- p.xv / Chapter Chapter1 --- Background of the thesis work / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Stability of charge on oxide --- p.1 / Chapter 1.3 --- Defects in SiO2/Si --- p.2 / Chapter 1.4 --- Objectives of the thesis work --- p.4 / Chapter 1.5 --- Organization of the thesis --- p.5 / Bibliography for Chapter1 --- p.6 / Chapter Chapter2 --- Theory of X-ray Photoelectron Spectroscopy (XPS) and Surface Charge Spectroscopy (SCS) / Chapter 2.1 --- Introduction --- p.7 / Chapter 2.2 --- X-ray photoelectron spectrometry (XPS) --- p.8 / Chapter 2.2.1 --- Binding energy reference for semiconductors --- p.10 / Chapter 2.2.2 --- Measurement of surface Fermi level --- p.15 / Chapter 2.2.3 --- XPS quantitative analysis --- p.17 / Chapter 2.2.3.1 --- Electron Inelastic Mean free Path --- p.16 / Chapter 2.2.3.2 --- Atomic concentration of a homogeneous material --- p.17 / Chapter 2.2.3.3 --- Determination of overlayer thickness --- p.19 / Chapter 2.3 --- Surface charge Spectroscopy (SCS) --- p.21 / Chapter 2.3.1 --- Principle of the SCS technique --- p.21 / Chapter 2.3.2 --- Control of the dielectric surface potential --- p.21 / Chapter 2.3.3 --- Dielectric layer surface potential --- p.22 / Chapter 2.3.4 --- Surface band bending --- p.23 / Chapter 2.3.5 --- Limitation of the dielectric layer thickness --- p.24 / Chapter 2.4 --- Applications of SCS on Metal-Oxide Semiconductor (MOS) --- p.24 / Chapter 2.4.1 --- Measurements of interface state density (Dit) --- p.24 / Chapter 2.4.2 --- Determination of density of fixed-oxide charges --- p.27 / Bibliography for Chapter2 --- p.28 / Chapter Chapter3 --- Instrumentation & methodology / Chapter 3.1 --- X-ray Photoelectron Spectroscopy (XPS) --- p.30 / Chapter 3.1.1 --- General description of the Kratos AXIS - HS XPS system --- p.30 / Chapter 3.1.2 --- X-ray source --- p.32 / Chapter 3.1.3 --- AXIS - HS electron analyzer and transfer lens system --- p.35 / Chapter 3.1.4 --- Laser alignment facility --- p.38 / Chapter 3.1.5 --- In-lens (Micro XPS) aperture --- p.38 / Chapter 3.1.6 --- Iris (Lens input aperture) --- p.39 / Chapter 3.1.7 --- Magnetic immersion lenses --- p.39 / Chapter 3.1.8 --- Lateral resolutions --- p.41 / Chapter 3.1.9 --- Charge neutralizer --- p.53 / Chapter 3.1.10 --- XPS imaging capability --- p.58 / Chapter 3.1.11 --- Angle-resolved X-ray photoelectron spectroscopy (ARXPS) --- p.58 / Chapter 3.1.12 --- Ion sputtering system and depth profiling --- p.59 / Chapter 3.2 --- Methodology for surface charging --- p.59 / Chapter 3.3 --- Sample preparation --- p.61 / Bibliography for Chapter3 --- p.62 / Chapter Chapter4 --- Fixed-oxide charge Qf(z) of thermally-grown SiO2/Si(100) / Chapter 4.1 --- Introduction --- p.63 / Chapter 4.2 --- Experimental results on oxide surface potential as a function of oxide thickness --- p.64 / Chapter 4.3 --- Calculation of fixed-oxide charge distribution --- p.69 / Chapter 4.3.1 --- Gauss's law --- p.69 / Chapter 4.3.2 --- Density of fixed-oxide charge --- p.70 / Chapter 4.4 --- Applications --- p.78 / Bibliography for chapter4 --- p.80 / Chapter Chapter5 --- Observation of dielectric electrical breakdown phenomena of SiO2/Si structure by SCS / Chapter 5.1 --- Introduction to electrical breakdown analysis in device electronics --- p.81 / Chapter 5.2 --- Experimental --- p.82 / Chapter 5.3 --- Results --- p.82 / Chapter 5.3.1 --- Analysis on 1000A Sio2/Si --- p.82 / Chapter 5.3.1.1 --- Variation of C 1s under charging --- p.82 / Chapter 5.3.1.2 --- Stochastic breakdown of SiO2 --- p.84 / Chapter 5.3.2 --- Analysis on 19k SiO2/Si --- p.91 / Chapter 5.4 --- Discussion --- p.93 / Chapter 5.4.1 --- Model of stochastic breakdown of SiO2/Si --- p.93 / Chapter 5.4.2 --- Variation of Si 2p under charging --- p.95 / Chapter 5.5 --- Summary --- p.96 / Bibliography for Chapter5 --- p.99 / Chapter Chapter6 / Conclusion --- p.100
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_323200 |
| Date | January 2000 |
| Contributors | Fong, Hon Hang., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, xvii, 100 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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