Polarization dependent photoluminescence (PL) study in 10K of m-plane III-nitrides was discussed in this thesis. Two samples were investigated: m-plane GaN film grown on m-sapphire substrate and m-plane InGaN film grown on m-GaN/m-sapphire substrate by plasma -assisted molecular beam epitaxy (PAMBE). Polarized luminescence characteristics were told by polarization dependent PL spectra in these two samples. Circular polarized, linear polarized and unpolarized laser sources were used to excite the samples. The results showed the PL intensity along the a-axis of the sample was stronger than along the c-axis with a polarization ratio with 65%; moreover, the peak positions showed polarization independent characteristic under a low temperature environment with 10K.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0825110-105143 |
| Date | 25 August 2010 |
| Creators | Chiang, Shu-yu |
| Contributors | Min-Hsiung Tsai, Li-Wei Tu, Yung-Sung Chen, Der-Jun Jang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825110-105143 |
| Rights | not_available, Copyright information available at source archive |
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