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Structures and light emission properties of ion-beam synthesized FeSi₂ in Si. / Structures & light emission properties of ion-beam synthesized FeSi₂ in Si

Chow Chi Fai. / Thesis submitted in: August 2005. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract / Abstract (Chinese) / A cknowledgements / Table of Contents / List of Figures / List of Tables / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- The need for light emission from silicon --- p.1-1 / Chapter 1.2 --- Silicon-based light emitting material 1 - --- p.2 / Chapter 1.3 --- Literature overview --- p.1-4 / Chapter 1.4 --- Project goal --- p.1-10 / Reference --- p.1-11 / Chapter Chapter 2 --- Experimental details / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Sample preparation techniques --- p.2-1 / Chapter 2.2.1 --- MEVVA ion implantation --- p.2-1 / Chapter 2.2.2 --- PL samples preparation conditions --- p.2-3 / Chapter 2.2.3 --- EL samples preparation conditions --- p.2-4 / Chapter 2.3 --- Characterization techniques --- p.2-7 / Chapter 2.3.1 --- Photoluminescence spectroscopy (PL) --- p.2-7 / Chapter 2.3.2 --- Electroluminescence spectroscopy (EL) --- p.2-9 / Chapter 2.3.3 --- Rutherford backscattering spectroscopy (RBS) --- p.2-10 / Chapter 2.3.4 --- X-ray diffraction (XRD) --- p.2-12 / Chapter 2.3.5 --- Transmission electron microscopy (TEM) --- p.2-13 / Reference --- p.2-15 / Chapter Chapter 3 --- Resutls and Discussions / Chapter 3.1 --- RBS results --- p.3-1 / Chapter 3.2 --- XRD results --- p.3-8 / Chapter 3.3 --- TEM results --- p.3-12 / Chapter 3.3.1 --- Effects of the implantation energy on the microstructure of samples --- p.3-13 / Chapter 3.3.2 --- Effects of the implantation dose on the microstructure of samples --- p.3-16 / Chapter 3.4 --- Photoluminescence results --- p.3-19 / Chapter 3.4.1 --- Effect of implantation energy on the PL --- p.3-19 / Chapter 3.4.2 --- Effect of FA temperature on the PL --- p.3-24 / Chapter 3.4.3 --- Effect of FA duration on the PL --- p.3-26 / Chapter 3.4.4 --- Effect ofRTA duration on the PL --- p.3-28 / Chapter 3.4.5 --- Effect ofRTA temperature on the PL --- p.3-30 / Chapter 3.4.6 --- Effect of implantation dose on the PL --- p.3-32 / Chapter 3.4.7 --- Si band edge enhancement --- p.3-34 / Chapter 3.4.8 --- Photoluminescence spectra as a function of excitation power density --- p.3-37 / Chapter 3.4.9 --- Photoluminescence spectra as a function of measurement temperature --- p.3-45 / Chapter 3.5 --- Electroluminescence results --- p.3-52 / Chapter 3.5.1 --- EL quantum efficiency --- p.3-60 / Reference --- p.3-61 / Chapter Chapter 4 --- Conclusion and future works / Chapter 4.1 --- Conclusion --- p.4-1 / Chapter 4.2 --- Future works --- p.4-2 / Appendix I / Appendix II

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_325494
Date January 2006
ContributorsChow, Chi Fai., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, 1 v. (various pagings) : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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