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Investigation of Ga2O3(Gd2O3)/GaAs/ In0.2Ga0.8As/GaAs Quantum Well with Different Annealing Temperatures Using Photoluminescence

Abstract
We discuss the PL spectra of Ga2O3(Gd2O3)/GaAs/In0.2Ga0.8As/GaAs quantum well with different annealing temperatures. First, we discuss the peak position of PL spectra. The peaks shift with different annealing temperatures, and it is due to the quantum well intermixing. Second, the excitation density dependence of In0.2Ga0.8As/GaAs quantum well is performed. We discuss the difference of 2D transition for quantum well and 3D transition for bulk GaAs.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0710102-152429
Date10 July 2002
CreatorsHsu, Ming-Kai
ContributorsLi-Wei Tu, Tsong-Sheng Lay, T.Y.Chang, Y. T. Lu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710102-152429
Rightsunrestricted, Copyright information available at source archive

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