Gallium nitride is an important III-V semiconductor which is used in many optoelectronic and high-frequency devices. The nature of the GaN surface and its electrical characteristics can impact the performance of such devices. In this study, several GaN surfaces are locally charged using an atomic force microscope, and then subsequently studied by measuring the surface potential with scanning Kelvin probe microscopy (SKPM). The charging and discharging behavior of the surface appears to be strongly influenced by surface preparation and the presence of a surface oxide layer. If a substantial oxide layer exists, then both positive and negative charging is possible on n-type and p-type samples. Surface treatments and photoemission spectroscopy (XPS) data confirm the presence and influence of the oxide layer on surface charging behavior. In the case of forward-bias charging, a small change in surface contact potential (0.1 – 0.3 eV) is observed that is primarily due to a small voltage drop across the surface oxide. Reverse-bias charging produces a substantially larger change in surface potential (~1 – 3 eV) that must be explained by a large increase in surface band bending. Temperature-dependent SKPM measurements also indicate that the decay behavior of deposited surface charge in dark involves a thermionic mechanism.
| Identifer | oai:union.ndltd.org:vcu.edu/oai:scholarscompass.vcu.edu:etd-1081 |
| Date | 26 April 2010 |
| Creators | Ferguson, Josephus |
| Publisher | VCU Scholars Compass |
| Source Sets | Virginia Commonwealth University |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Theses and Dissertations |
| Rights | © The Author |
Page generated in 0.0019 seconds