Single Event Gate Rupture (SEGR) induced by an energetic ion traversing a MOSFET may cause catastrophic failure of the device. The mechanism for SEGR in a power MOSFET structure is investigated in this work. A simple analytical prediction method is introduced. This prediction method allows evaluation of device SEGR sensitivity through 2-D computer simulations and therefore avoids the need for time consuming and costly experiments on an ion accelerator. A thorough investigation of SEGR sensitivity dependence is shown for a variety of influencing factors such as (i) device parametric variations, (ii) ion strike characteristics, and (iii) device operation temperature. Based on knowledge of the physical model for the SEGR mechanism and the utilization of simulation results and experimental SEGR data, useful SEGR hardening techniques are suggested.
| Identifer | oai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/282345 |
| Date | January 1997 |
| Creators | Allenspach, Mark, 1967- |
| Contributors | Brews, John R. |
| Publisher | The University of Arizona. |
| Source Sets | University of Arizona |
| Language | en_US |
| Detected Language | English |
| Type | text, Dissertation-Reproduction (electronic) |
| Rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. |
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