The penetration of a quasistatic electric field into an epitaxial film of Yba$\sb2$Cu$\sb3$O$\sb{\rm 7-x}$ was studied around the film's transition temperature. The electric field penetration into the YBa$\sb2$Cu$\sb3$O$\sb{\rm 7-x}$ electrode was shown to vary by as much as 100A in the temperature regime 60K $<$ T $<$ 110K. The distance between the physical interface and the effective electrical interface is at least 100A at temperatures within 25K of T$\sb{\rm c}$. The direction of interfacial movement is reversed at T$\sb{\rm c}$. The data are consistent with the continuous movement, with changing temperature, of an interface between two regions, one penetrated by the electric field and one devoid of electric field. / The data indicate far stronger temperature dependance and magnitude of the delocalization forces along the c-axis of the material in both the superconducting and normal state than could be expected from any conventional theory of metals. / Applying a dc bias to the films, the effect of charge carrier concentration on T$\sb{\rm c}$ was studied. The first and second derivatives of T$\sb{\rm c}$ with respect to surface carrier concentration were determined to be, respectively, near zero and negative. / Source: Dissertation Abstracts International, Volume: 54-03, Section: B, page: 1471. / Major Professor: Louis R. Testardi. / Thesis (Ph.D.)--The Florida State University, 1993.
| Identifer | oai:union.ndltd.org:fsu.edu/oai:fsu.digital.flvc.org:fsu_76894 |
| Contributors | Jenks, William Glen., Florida State University |
| Source Sets | Florida State University |
| Language | English |
| Detected Language | English |
| Type | Text |
| Format | 133 p. |
| Rights | On campus use only. |
| Relation | Dissertation Abstracts International |
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