Room temperature optical energy gap values for GaxIn (1-x)As and GaAsxSb(1-x) alloys have been determined from infrared transmission measurements. For GaxIn(1-x)As alloys Burstein effect was observed and the necessary correction to the energy gap was made by finding the Fermi energy from thermoelectric power data. For both the alloy systems value of C the bowing parameter has been obtained. These values show good agreement with the theoretical values of Van Vechten and Bergstresser. Room temperature infrared reflectivity measurements near the plasma edge and high field Hall effect measurements have been made on polycrystalline n-type samples of GaxIn(1-x)Sb, GaxIn (1-x)As and InAsxSb(1-x) alloys. The Spitzer and Fan expressions for dielectric constant (57S1) applicable for degenerate case have been extended to the case of general degeneracy in a Kane type band, the effects of lattice contributions to the dielectric constant being included. This analysis has been applied to the experimental data to give values of effective mass at the bottom of the (000) conduction band minimum of the three alloy systems. These effective mass values show very good agreement with the values obtained by Faraday rotation and magnetothermoelectric power measurements.
| Identifer | oai:union.ndltd.org:uottawa.ca/oai:ruor.uottawa.ca:10393/10803 |
| Date | January 1969 |
| Creators | Thomas, Mathew B. |
| Publisher | University of Ottawa (Canada) |
| Source Sets | Université d’Ottawa |
| Detected Language | English |
| Type | Thesis |
| Format | 217 p. |
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