Intersubband resonances in InAs/AlSb are an ideal tool for optically pumped terahertz (THz) generation because of their enormous tunability and their strength at room temperature. We have carried out a systematic temperature-dependent study of intersubband absorption in InAs/AlSb quantum wells from S to 10 nm well width. The resonance energy redshifts with increasing temperature from 10 to 300 K, and the amount of redshift increases with decreasing well width. We have also observed intersubband absorption in wells as narrow as 3 nm, investigated the carrier distribution in the wells and its influence on intersubband absorption, and performed temperature-dependent cyclotron resonance using a THz quantum cascade laser. We have observed multiple intersubband resonances in coupled quantum well structures designed for THz difference frequency generation. We have modeled the resonances using eight-band k·p theory combined with semiconductor Bloch equations, including the main many-body effects. Temperature is incorporated via band filling and nonparabolicity.
| Identifer | oai:union.ndltd.org:RICE/oai:scholarship.rice.edu:1911/17698 |
| Date | January 2004 |
| Creators | Larrabee, Diane |
| Contributors | Kono, Junichiro |
| Source Sets | Rice University |
| Language | English |
| Detected Language | English |
| Type | Thesis, Text |
| Format | 78 p., application/pdf |
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