In the past decade, p-type ZnO material has been investigated extensively. Its properties offer the potential for broad applications including the development of ultraviolet light emitting devices. Although n-type ZnO material is well known and studied for decades, the fabrication method and properties of p-type ZnO material are still to date not clearly understood. / In this report, reproducible p-type ZnO thin films sputtered on glass substrates are reported. On the same substrate, p-type ZnO film is local and surrounded by n-type ZnO regions. The thickness of the films is typically three microns after several hours of deposition by radio-frequency magnetron sputtering technique. Both p-type ZnO and n-type thin films are characterized by optical and electrical measurements at room temperature. / The crystal structure of p-type ZnO is examined by X-ray diffraction patterns. The X-ray diffraction patterns show that the material is polycrystalline and has (100) and (101) preferred orientation. Photoluminescence spectra of ZnO help to identify the energy levels in the material and spectra analysis reveals the presence of defects and dopants in the material. For p-type ZnO, the resistivity, the hole concentration and hole mobility are found to be 148.8 O-cm, 4.34 x 1018/cm3 and 1.72 x 10-2 cm2/V-sec respectively.
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:QMM.99550 |
| Date | January 2006 |
| Creators | Yang, Hung-Pao, 1980- |
| Publisher | McGill University |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | English |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Format | application/pdf |
| Coverage | Master of Engineering (Department of Electrical and Computer Engineering.) |
| Rights | © Hung-Pao Yang, 2006 |
| Relation | alephsysno: 002573875, proquestno: AAIMR28634, Theses scanned by UMI/ProQuest. |
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