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Neutron irradiation damage to avalanche photodiodes and the properties of generated defects

Avalanche Photodiode (APD) is a compact and rugged device, with single photon detection capability and high quantum efficiency. It is a good candidate as a detector to observe irradiation damage to silicon devices and the irradiation induced defects. In this thesis, we have observed the bistable defects and the multistable defects in the APD. We can also observe the time evolution of defect formation and annihilation with time resolution of 10 ms. Also we develop a technique to observe the evolution of defects in real time with an improved time resolution of 1 $ mu s$.

Identiferoai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:QMM.23880
Date January 1995
CreatorsDai, Ming
ContributorsBuchinger, Fritz (advisor)
PublisherMcGill University
Source SetsLibrary and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada
LanguageEnglish
Detected LanguageEnglish
TypeElectronic Thesis or Dissertation
Formatapplication/pdf
CoverageMaster of Science (Department of Physics.)
RightsAll items in eScholarship@McGill are protected by copyright with all rights reserved unless otherwise indicated.
Relationalephsysno: 001499681, proquestno: MM12177, Theses scanned by UMI/ProQuest.

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