Avalanche Photodiode (APD) is a compact and rugged device, with single photon detection capability and high quantum efficiency. It is a good candidate as a detector to observe irradiation damage to silicon devices and the irradiation induced defects. In this thesis, we have observed the bistable defects and the multistable defects in the APD. We can also observe the time evolution of defect formation and annihilation with time resolution of 10 ms. Also we develop a technique to observe the evolution of defects in real time with an improved time resolution of 1 $ mu s$.
Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:QMM.23880 |
Date | January 1995 |
Creators | Dai, Ming |
Contributors | Buchinger, Fritz (advisor) |
Publisher | McGill University |
Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
Language | English |
Detected Language | English |
Type | Electronic Thesis or Dissertation |
Format | application/pdf |
Coverage | Master of Science (Department of Physics.) |
Rights | All items in eScholarship@McGill are protected by copyright with all rights reserved unless otherwise indicated. |
Relation | alephsysno: 001499681, proquestno: MM12177, Theses scanned by UMI/ProQuest. |
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